Reliable high-power single-mode GaAlAs/GaAs laser diodes mounted epi-side up

Aland K. Chin; Zuntu Xu; Kejian Luo; Lisen Cheng; Al Nelson; Wei Gao

doi:10.1117/12.528342

1 June 2004 Reliable high-power single-mode GaAlAs/GaAs laser diodes mounted epi-side up

Aland K. Chin, Zuntu Xu, Kejian Luo, Lisen Cheng, Al Nelson, Wei Gao

Proceedings Volume 5336, High-Power Diode Laser Technology and Applications II; (2004) https://doi.org/10.1117/12.528342
Event: Lasers and Applications in Science and Engineering, 2004, San Jose, Ca, United States

Abstract

Reliable, high-power, single-mode, GaAlAs/GaAs, laser-diodes in the spectral region of 780 - 900 nm have been designed with procedures developed for telecom-grade, 980 nm, InGaAs/GaAlAs/GaAs pump diodes. Fifteen 808 nm, single-mode laser-diodes, mounted epitaxial-side up onto AlN submounts with eutectic Au₈₀Sn₂₀ solder, have been operated reliably for 3500 hours at 150 mW.

Citation Download Citation

Aland K. Chin, Zuntu Xu, Kejian Luo, Lisen Cheng, Al Nelson, and Wei Gao "Reliable high-power single-mode GaAlAs/GaAs laser diodes mounted epi-side up", Proc. SPIE 5336, High-Power Diode Laser Technology and Applications II, (1 June 2004); https://doi.org/10.1117/12.528342

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