Paper
14 May 2004 Application of newly synthesized poly(hydroxystyrene-acrylate) copolymers to improve vacuum stability on E-beam resist for mask fabrication
Author Affiliations +
Abstract
Recently, there are lots of interest in using chemical amplification (CA) on electron beam lithography for application to photo mask fabrication, direct writing, and projection printing. E-beam resists introducing chemically amplification concepts provide superior lithographic performance in comparison with traditional non CA E-Beam resist in particular high resolution and sensitivity. In first approach, we applied CA concepts to acetyl polymer based E-beam resist (resist thickness: 4,000Å), which can print fine images (<100nm), meet sensitivity (10μC/cm2), and have stability against post exposure delay (PED)(>10hrs) using 50KeV E-beam exposure tool. But, there is vacuum delay problem (40nm CD shrinkage/5hrs) due to thermally unstable blocking group in polymer. To prevent this vacuum delay problem due to polymer-inherent thermal instability in low-activation-energy-acetal polymer, we newly designed various poly(hydroxystyrene-acrylate) copolymer derivatives that contained thermally stable (acrylate) acid-blocking group. In this presentation, first we will discuss the chemistry of newly designed copolymer derivatives, and second, vacuum delay effects and other lithographic performances (resolution, sensitivity, line edge roughness) of these resist systems.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dong-hwal Lee, Sang-jung Kim, Dong-uk Choi, Deogbae Kim, Jaehyun Kim, and Chang-hwan Kim "Application of newly synthesized poly(hydroxystyrene-acrylate) copolymers to improve vacuum stability on E-beam resist for mask fabrication", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.534999
Lens.org Logo
CITATIONS
Cited by 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Polymers

Chemistry

Lithography

Mask making

Line edge roughness

Electron beam lithography

Photomasks

Back to Top