Development of an accurate empirical model for ArF lithography

Shoji Mimotogi; Daisuke Kawamura; Takashi Sato; Soichi Inoue

doi:10.1117/12.536279

28 May 2004 Development of an accurate empirical model for ArF lithography

Shoji Mimotogi, Daisuke Kawamura, Takashi Sato, Soichi Inoue

Proceedings Volume 5377, Optical Microlithography XVII; (2004) https://doi.org/10.1117/12.536279
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

“Dose-MEF” was measured on ArF and KrF resists. The “dose-MEF” is very important factor for mask making spec. Conventional lithography simulation such as “Diffused aerial image simulation” does not predict the ArF experimental value precisely. In order to explain the dose-MEF of ArF resist, we introduce intensity biasing. The intensity biasing is caused by flare of exposure tool and another mechanism. The intensity biasing reduces the dose-MEF. Small dose-MEF leads to the relaxed mask spec.

Citation Download Citation

Shoji Mimotogi, Daisuke Kawamura, Takashi Sato, and Soichi Inoue "Development of an accurate empirical model for ArF lithography", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.536279

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available