High Temperature Positive Photoresist For Use On Reflective Topography And Sputter Applications

M. Toukhy; S. Tadros; C. Guglielmo

doi:10.1117/12.947818

18 April 1985 High Temperature Positive Photoresist For Use On Reflective Topography And Sputter Applications

M. Toukhy, S. Tadros, C. Guglielmo

Proceedings Volume 0539, Advances in Resist Technology and Processing II; (1985) https://doi.org/10.1117/12.947818
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States

Abstract

A phenolic resist system was formulated with a selected anti-reflective dye tuned for use with stepper exposure equipment in the 400-436 nm region. High exposure latitude and better than 1.25 micrometer resolution were demonstrated over highly reflective aluminized topography. Excellent 200^oC. resist image stability was enhanced by deep UV treatment to endure prolonged heating at 400°C. It is felt that this resist is a good candidate for use in high temperature processes such as sputtering applications.

Citation Download Citation

M. Toukhy, S. Tadros, and C. Guglielmo "High Temperature Positive Photoresist For Use On Reflective Topography And Sputter Applications", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); https://doi.org/10.1117/12.947818

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