Model of independent sources used for calculation of distribution of minority charge carriers generated in two-layer semiconductor by electron beam

M. A. Stepovich; A. G. Khokhlov; M. G. Snopova

doi:10.1117/12.552175

1 March 2004 Model of independent sources used for calculation of distribution of minority charge carriers generated in two-layer semiconductor by electron beam

M. A. Stepovich, A. G. Khokhlov, M. G. Snopova

Author Affiliations +

Proceedings Volume 5398, Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics; (2004) https://doi.org/10.1117/12.552175
Event: Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics, 2003, Moscow, Russian Federation

Abstract

The calculation method of distributions of minority charge carriers generated in the two-layer semiconductor by a wide electron beam with energies 5 - 30 keV based on using the model of independent sources is described.

Citation Download Citation

M. A. Stepovich, A. G. Khokhlov, and M. G. Snopova "Model of independent sources used for calculation of distribution of minority charge carriers generated in two-layer semiconductor by electron beam", Proc. SPIE 5398, Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics, (1 March 2004); https://doi.org/10.1117/12.552175

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