As is known in literature are discussed the number of methods of high power EUV sources creation for EUV lithography including laser application, micro pinch, plasma focus, capillary discharge etc. The aim of this paper is to find the optimal physical conditions in plasma as EUV source taking into account, before all, the kinetics an transfer of light quantum. It is shown that the efficiency of plasma EUV source depends, in the main, on material of target, density of electrons and their temperature. In conclusion a variant of creating an alternative ("linear") EUV source on the basis of self-compression of plasma shells in the regime of slow energy input is considered.
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