Photodetectors on the base of ZnO thin films

Natella R. Aghamalyan; Ruben K. Hovsepyan; Armen R. Poghosyan; Vahe G. Lazaryan

doi:10.1117/12.556790

22 October 2004 Photodetectors on the base of ZnO thin films

Natella R. Aghamalyan, Ruben K. Hovsepyan, Armen R. Poghosyan, Vahe G. Lazaryan

Proceedings Volume 5560, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications X; (2004) https://doi.org/10.1117/12.556790
Event: Optical Science and Technology, the SPIE 49th Annual Meeting, 2004, Denver, Colorado, United States

Abstract

ZnO thin film is the perspective material for using as active layer in solid-state UV photodetectors. Here we present our investigations of photoelectric properties of the developed photosensitive field-effect transistor. Pure and lithium doped ZnO films were produced by vacuum electron-beam deposition method. Field effect was studied in Li doped ZnO films having high resistivity and in heterostructures consisting of three ZnO layers doped by 1, 5 and 10 at% of Li impurity accordingly. The photoelectric characteristics were measured (currents ratio, charge carriers mobility, ampere-watt sensitivity in UV diapason, NEP sensitivity, and photocurrent kinetics). The open and close current ratio was 106 and the field-effect mobility was ~10 cm²/Vsec. We have also studied the low-frequency noises (0.001÷100 kHz) of UV photodetector and suggested the methods of noise suppression. It was found that the dark current noises and photocurrent noises have different mechanisms.

Citation Download Citation

Natella R. Aghamalyan, Ruben K. Hovsepyan, Armen R. Poghosyan, and Vahe G. Lazaryan "Photodetectors on the base of ZnO thin films", Proc. SPIE 5560, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications X, (22 October 2004); https://doi.org/10.1117/12.556790

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