R-mask: a new concept and its application for small-volume production

Katsuya Hayano; Shoji Hotta; Norio Hasegawa; Kunihiro Hosono; Toshihiko Tanaka; Kazuyuki Suko; Shiho Sasaki; Hiroshi Mohri; Morihisa Hoga; Naoya Hayashi

doi:10.1117/12.572200

6 December 2004 R-mask: a new concept and its application for small-volume production

Katsuya Hayano, Shoji Hotta, Norio Hasegawa, Kunihiro Hosono, Toshihiko Tanaka, Kazuyuki Suko, Shiho Sasaki, Hiroshi Mohri, Morihisa Hoga, Naoya Hayashi

Author Affiliations +

Proceedings Volume 5567, 24th Annual BACUS Symposium on Photomask Technology; (2004) https://doi.org/10.1117/12.572200
Event: Photomask Technology, 2004, Monterey, California, United States

Abstract

We have developed a resist-shade mask (R-mask) technology applicable for small-volume production. The R-mask uses a novel resist as a shading material instead of chromium (Cr), and it exhibits sufficient durability against KrF exposure for ASIC and pilot line applications. Because the R-mask does not require a Cr etching process, it can reduce mask costs and improve critical dimension (CD) uniformity. A defect inspection technique for R-masks has also been investigated, and no defects were observed on a wafer for several R-masks used for device fabrication. The part of the R-mask making contact in exposure tools was carefully designed to not retain resist material so as to avoid particle contamination. We applied several R-masks to form wiring layers for 0.25-um and 0.18-um logic devices and confirmed that there were no differences in process margin and product yield between the R-masks and conventional Cr masks. We have also developed the partial R-mask, which consists of both conventional Cr mask and R-mask areas. The partial R-mask is very effective for customizing semiconductor chips. The R-mask area is applied only to customized circuit areas or certain wiring patterns to adjust circuit characteristics, whereas the common circuit area is delineated by the Cr pattern. The R-mask can be also used to customize attenuated phase-shifting masks, and to make unnecessary hole patterns opaque in prepared hole arrays. The R-mask is a very promising technology for reducing mask costs and improving the turn-around time (TAT) of masks, because of its simple manufacturing process and reworkable capability.

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Katsuya Hayano, Shoji Hotta, Norio Hasegawa, Kunihiro Hosono, Toshihiko Tanaka, Kazuyuki Suko, Shiho Sasaki, Hiroshi Mohri, Morihisa Hoga, and Naoya Hayashi "R-mask: a new concept and its application for small-volume production", Proc. SPIE 5567, 24th Annual BACUS Symposium on Photomask Technology, (6 December 2004); https://doi.org/10.1117/12.572200

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KEYWORDS

Photomasks

Chromium

Semiconducting wafers

Inspection

Defect inspection

Logic devices

Photography

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