Paper
20 December 2004 High-brightness red-emitting AlGaInP thin film RCLEDs
Reto Joray, Marc Ilegems, Ross Stanley, Wolfgang Schmid, Rainer Butendeich, Ralph Wirth, Arndt Jaeger, Klaus Streubel
Author Affiliations +
Proceedings Volume 5594, Physics and Applications of Optoelectronic Devices; (2004) https://doi.org/10.1117/12.579495
Event: Optics East, 2004, Philadelphia, Pennsylvania, United States
Abstract
High brightness AlGaInP thin-film resonant cavity LEDs with an emission wavelength around 650 nm are presented. The combination of a thin-film waveguide structure and a resonant cavity with an omnidirectional reflector (ODR) leads to significantly higher efficiencies compared to standard resonant cavity LED (RCLED) structures. Preliminary devices based on this configuration show external quantum efficiencies of 23% and 18% with and without encapsulation, respectively, despite a non-ideal detuning. These devices exhibit a narrow far-field pattern and are therefore adapted for applications requiring high brightness emitters such as for example plastic optical fiber communications. By opting for a negative detuning, i.e. a cavity resonance that is red-shifted compared to the intrinsic emission spectrum, even higher efficiencies should be achievable.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Reto Joray, Marc Ilegems, Ross Stanley, Wolfgang Schmid, Rainer Butendeich, Ralph Wirth, Arndt Jaeger, and Klaus Streubel "High-brightness red-emitting AlGaInP thin film RCLEDs", Proc. SPIE 5594, Physics and Applications of Optoelectronic Devices, (20 December 2004); https://doi.org/10.1117/12.579495
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Cited by 5 scholarly publications.
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KEYWORDS
Thin films

External quantum efficiency

Light emitting diodes

Aluminium gallium indium phosphide

Reflectors

Semiconductors

Waveguides

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