High-reliability high-efficiency 976-nm diode laser pump sources

Eric Stiers; Manoj Kanskar

doi:10.1117/12.591030

17 March 2005 High-reliability high-efficiency 976-nm diode laser pump sources

Eric Stiers, Manoj Kanskar

Proceedings Volume 5711, High-Power Diode Laser Technology and Applications III; (2005) https://doi.org/10.1117/12.591030
Event: Lasers and Applications in Science and Engineering, 2005, San Jose, California, United States

Abstract

Long term lifetest data is presented for Al-free active region 980 nm multimode laser diodes configured as chip-on-submount devices, as packaged fiber-coupled devices, and as multi-emitter laser bars on a microchannel cooled heatsink. Single emitter devices have been tested in chip-on-submount form. A first set of 120 of these devices were tested in a five-cell matrix at varying junction temperatures and optical output levels to obtain measured values for both random and wear-out failure model parameters. A second set of 187 packaged lasers were placed on accelerated lifetest to measure FIT data. In both cases, the devices were operated for up to 9,000. Another set of chips were packaged and tested inside a fiber-coupled, TEC cooled, 14 pin butterfly case as part of a Telcordia qualification process. These devices were operated for up to 5,000 hours with no failures and no degradation of either the chip or the package. Bar devices with a 20% fill factor were mounted on microchannel heatsinks and tested for one second on, one second off quasi CW operation for 4,000 hours. This test condition places a thermal expansion cycle stress on the devices, however once past the initial burn-in period very little degradation is seen in the output characteristics of the device.

Citation Download Citation

Eric Stiers and Manoj Kanskar "High-reliability high-efficiency 976-nm diode laser pump sources", Proc. SPIE 5711, High-Power Diode Laser Technology and Applications III, (17 March 2005); https://doi.org/10.1117/12.591030

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