New advanced BARC materials for ultra-high NA applications

James B. Claypool; Marc Weimer; Vandana Krishnamurthy; Wendy Gehoel; Koen van Ingen Schenau

doi:10.1117/12.599988

4 May 2005 New advanced BARC materials for ultra-high NA applications

James B. Claypool, Marc Weimer, Vandana Krishnamurthy, Wendy Gehoel, Koen van Ingen Schenau

Author Affiliations +

Proceedings Volume 5753, Advances in Resist Technology and Processing XXII; (2005) https://doi.org/10.1117/12.599988
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

The 65nm half pitch node will require 193nm wavelength in combination with NA > 0.9 to keep k1 above 0.3. With such high angles of diffracted light the relative amount of TE (or s) polarization that contributes to image formation increases. Unfortunately, the swing curve for TE polarization is higher than normal for traditional BARC materials. This study explores new advanced bottom anti-reflective coating (BARC) materials dedicated to ultra-high NA imaging. The improvements in imaging performance over traditional BARCs are shown through simulations and experimental results with the latest high NA TWINSCAN XT:1400 exposure systems. Simulations will show the relation between various BARC and top anti-reflective coating (TARC) material approaches and high NA imaging performance. This was done, among other things, as function of illumination settings. These simulations are accompanied by experimental results with the different suggested BARC strategies as multi-layer BARCs and tunable reflective index materials. Initial experiments were done on the TWINSCAN XT:1250 with 0.85NA. After analyzing these results, further tests were done on the TWINSCAN XT:1400 NA=0.93 exposure system. These results verify the feasibility of the newly developed BARC materials.

Citation Download Citation

James B. Claypool, Marc Weimer, Vandana Krishnamurthy, Wendy Gehoel, and Koen van Ingen Schenau "New advanced BARC materials for ultra-high NA applications", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.599988

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