New shrinkage technology for nano-contact hole formation

Geunsu Lee; Jungwoo Park; Wonwook Lee; Cheolkyu Bok; Changmoon Lim; Sungchan Moon

doi:10.1117/12.598592

4 May 2005 New shrinkage technology for nano-contact hole formation

Geunsu Lee, Jungwoo Park, Wonwook Lee, Cheolkyu Bok, Changmoon Lim, Sungchan Moon

Proceedings Volume 5753, Advances in Resist Technology and Processing XXII; (2005) https://doi.org/10.1117/12.598592
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

More simple and cost-effective shrinkage techniques for contact hole (C/H) are required instead of conventional technologies such as thermal flow, RELACS, SAFIER and CONPEAT with the aggressive reduction in size of devices. We have developed a new method, Coating Assisted Shrinkage of Space (CASS) process. This process simply coats polymer over the patterned wafer. It doesn't need a bake and rinse step for shrinkage. Sub-100 nm C/H patterns were successfully defined after coating CASS material with good profile.

Citation Download Citation

Geunsu Lee, Jungwoo Park, Wonwook Lee, Cheolkyu Bok, Changmoon Lim, and Sungchan Moon "New shrinkage technology for nano-contact hole formation", Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); https://doi.org/10.1117/12.598592

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