Ion implantation into Si covered by HfO2 or SiO2 film

Hao Shi; Min Yu; Ru Huang; Xing D. Zhang; Yangyuan Wang

doi:10.1117/12.607558

8 December 2004 Ion implantation into Si covered by HfO₂ or SiO₂ film

Hao Shi, Min Yu, Ru Huang, Xing D. Zhang, Yangyuan Wang

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607558
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

Ion implantations into HfO₂ and SiO₂ are simulated comparatively by using a molecular dynamics simulator LEACS. With precise physical models and high efficiency algorithms implemented in LEACS, the simulated results accurately agree with the SIMS data. Based on the verification of the LEACS simulator, Oxide Thickness Modulation Effect (OTME for short) has been quantitatively investigated by simulating implantations in HfO₂/Si and SiO₂/Si multiplayer structures, respectively. A much more drastic OTME for implantation in HfO₂/Si is observed from simulation. It is found that if HfO₂ replaces SiO₂ as the gate dielectric, the shift of the range profiles in Si substrate is in the order of several 10%s of the total junction depth, which will have a significant impact on MOS device performance in IC process of next decade.

Citation Download Citation

Hao Shi, Min Yu, Ru Huang, Xing D. Zhang, and Yangyuan Wang "Ion implantation into Si covered by HfO₂ or SiO₂ film", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607558

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