The studies of RT electrical resistivities of LaNiO3-&#948; thin films by RF magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures

X. D. Zhang; Xiang Jian Meng; Jing Lan Sun; Gen Shui Wang; Tie Lin; Jun Hao Chu

doi:10.1117/12.607751

8 December 2004 The studies of RT electrical resistivities of LaNiO_3-δthin films by RF magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures

X. D. Zhang, Xiang Jian Meng, Jing Lan Sun, Gen Shui Wang, Tie Lin, Jun Hao Chu

Author Affiliations +

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607751
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

Electrically conductive LaNiO_3-δthin film with perovskite-type structure were deposited on Si(100)/n substrates by rf magnetron sputtering at substrate temperature 200°C , 300°C, 450°C, 600°C with a series of 0%, 20%, 40%, 60% oxygen partial pressure respectively. The La₂NiO₄ and NiO peak of XRD are not observed. The RT resistivity of LNO films decreases with the decreasing substrate temperature at a fixed oxygen partial pressure and with increasing oxygen partial pressure at a fixed substrate temperature.

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X. D. Zhang, Xiang Jian Meng, Jing Lan Sun, Gen Shui Wang, Tie Lin, and Jun Hao Chu "The studies of RT electrical resistivities of LaNiO_3-δthin films by RF magnetron sputtering with different percentage of oxygen partial pressure at various substrate temperatures", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607751

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