Passivation of MBE grown GaInSb/InAs superlattice photodiodes

Cory J. Hill; Sam S. Keo; Jason M. Mumolo; Sarath D. Gunapala

doi:10.1117/12.606941

31 May 2005 Passivation of MBE grown GaInSb/InAs superlattice photodiodes

Cory J. Hill, Sam S. Keo, Jason M. Mumolo, Sarath D. Gunapala

Proceedings Volume 5783, Infrared Technology and Applications XXXI; (2005) https://doi.org/10.1117/12.606941
Event: Defense and Security, 2005, Orlando, Florida, United States

Abstract

We have performed wet chemical passivation tests on GaInSb/InAs superlattice photodiode structures grown by molecular beam epitaxy. The details of the devices growth and characterization as well as the results of chemical passivation involving RuCl₃ and H₂SO₄ with SiO₂ dielectric depositions are presented.

Citation Download Citation

Cory J. Hill, Sam S. Keo, Jason M. Mumolo, and Sarath D. Gunapala "Passivation of MBE grown GaInSb/InAs superlattice photodiodes", Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); https://doi.org/10.1117/12.606941

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