Open Access Paper
28 June 2005 Imaging and manipulating heterostructure interfaces
Roy Clarke, Codrin Cionca, Catalina Dorin, Benny Perez Rodriguez, Joanna Mirecki Millunchick, Don A. Walko, Yizhak Yacoby
Author Affiliations +
Proceedings Volume 5838, Nanotechnology II; (2005) https://doi.org/10.1117/12.608364
Event: Microtechnologies for the New Millennium 2005, 2005, Sevilla, Spain
Abstract
Epitaxial heterostructures constitute a wide variety of modern microelectronics devices. In the limit of ever decreasing feature dimensions, now entering the nanoscale in some cases, the interfaces of such devices are crucial to their operation and performance. In general the properties of the interfaces will differ significantly from those of the bulk structure of either the substrate or the heteroepitaxial film. To date, direct, non-destructive characterizations of the atomic-level structure of films and interfaces have not been readily available and this has hampered the design and optimization of heteroepitaxial devices. We describe here a novel x-ray interference method which is useful for imaging such structures with sub-Ångstrom spatial resolution while also providing chemical composition information from a map of the electron density. We illustrate the method, known as Coherent Bragg Rod Analysis (COBRA), with recent results on GaSb-InAs heterostructures of interest as infrared sources and detectors. We show that, with detailed knowledge of the interfaces from COBRA, it is now feasible to correlate specific molecular beam epitaxy growth conditions with desired electronic characteristics associated with the interface bonding. The COBRA method is quite general and only requires an epitaxial relationship between the substrate and the nanostructure that is deposited on it.
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Roy Clarke, Codrin Cionca, Catalina Dorin, Benny Perez Rodriguez, Joanna Mirecki Millunchick, Don A. Walko, and Yizhak Yacoby "Imaging and manipulating heterostructure interfaces", Proc. SPIE 5838, Nanotechnology II, (28 June 2005); https://doi.org/10.1117/12.608364
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KEYWORDS
Interfaces

Gallium antimonide

Indium arsenide

X-rays

Heterojunctions

Chemical analysis

Scattering

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