Paper
28 June 2005 AUV5500: advanced in situ dry cleaning and metrology process for next generation lithography
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Abstract
Today, the industry is suffering from the consequences of residue and contaminants on the mask surface as they significantly affect the printing quality of the reticle. Thus a good control of the mask cleanliness via its optical properties is becoming essential to minimize this impact. The AUV5500 is specifically addressing organic contaminants. The principle of the tool set-up, its process functionality is presented. Preliminary data on the impact of organic contaminants on binary and embedded phase shift masks optical properties and the tool cleaning capability are analyzed and discussed.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christian Chovino, Stefan Helbig, and Peter Dress "AUV5500: advanced in situ dry cleaning and metrology process for next generation lithography", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617119
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Reflectivity

Ultraviolet radiation

Spectroscopy

Photomasks

Reflection

Contamination

Quartz

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