Paper
30 August 2005 Laser crossing in thin-film GaAs for all-optical computing realizations
Artur Erlacher, Bruno Ullrich
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Abstract
Photonic THz laser digitizing with thin-film GaAs on glass is demonstrated. In fact, the GaAs/glass interface can be used for an effective all-optical digitizer (35%) of transmitted and reflected laser beams. The films have been formed with pulsed-laser deposition. The switching principle is extremely straightforward: two (or more) laser rays were crossed at the same spot on the interface. Most of the experiments have been carried out with red (read) and green (write) laser rays. The information of the write beam is transferred to the read beam by means of alteration of the electronic state of the interface. Pump-probe experiments revealed that the absorption change, i.e., the alteration of the electronic state, takes place within a few picoseconds. Therefore, logic operations in the THz range become feasible. In addition, NOR and NAND gate realizations with laser crossing are possible. Besides the formation of smart all-optical cross-links, all-optical computing is further application of laser crossing. Based on the unmatched simplicity of the switch realization, switching speed, and the fairly low material quality demands, laser crossing in thin-film GaAs has the potential to be used in future optical networks. This work further stresses the hybrid mode with laser crossing in thin-film GaAs/glass interfaces.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Artur Erlacher and Bruno Ullrich "Laser crossing in thin-film GaAs for all-optical computing realizations", Proc. SPIE 5907, Photonic Devices and Algorithms for Computing VII, 590703 (30 August 2005); https://doi.org/10.1117/12.615198
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KEYWORDS
Interfaces

Thin films

Glasses

Switching

Gallium arsenide

Reflection

Semiconductors

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