Paper
29 September 2005 Type conductivity conversion in MOCVD CdxHg1-xTe/GaAs hetero-structures under ion milling
Ihor Izhnin, Victor Bogoboyashchyy, Anatoliy Kotkov, Alexsandr Moiseev, Natalya Grishnova
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Abstract
P-n conductivity type conversion under ion milling in MOCVD p-CdxHg1-xTe/GaAs multi-layer hetero-structures is considered. It was revealed that CdTe (1 μm thick) passivation layer displayed the protective properties regarding ion milling action on active layer. P-n conversion at ion milling was observed in structures with 0.1-0.2 μm thick CdTe passivation layer; however, the converted depth (7 μm) was smaller than that in the similar homogeneous samples (15 μm). It was shown that the main properties of the converted p-n structures with thin CdTe layer were the same as in homogeneous samples. Ion milling resulted in forming of the typical n+- n - p+ structure with damaged n+-layer and main converted n-layer characterised by very low electron concentration. The relaxation of p-n structure electrical properties was also studied.
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Ihor Izhnin, Victor Bogoboyashchyy, Anatoliy Kotkov, Alexsandr Moiseev, and Natalya Grishnova "Type conductivity conversion in MOCVD CdxHg1-xTe/GaAs hetero-structures under ion milling", Proc. SPIE 5957, Infrared Photoelectronics, 595716 (29 September 2005); https://doi.org/10.1117/12.622113
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KEYWORDS
Mercury

Tellurium

Ions

Metalorganic chemical vapor deposition

Cadmium

Chemical species

Crystals

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