Electron beam pattern generator sensitivity to target potentials

Junru Ruan; John Hartley

doi:10.1117/12.631876

8 November 2005 Electron beam pattern generator sensitivity to target potentials

Junru Ruan, John Hartley

Proceedings Volume 5992, 25th Annual BACUS Symposium on Photomask Technology; 59924T (2005) https://doi.org/10.1117/12.631876
Event: SPIE Photomask Technology, 2005, Monterey, California, United States

Abstract

Electrostatic chucking is the plan of record for mask clamping in Extreme Ultraviolet (EUV) lithography. In order to minimize mask distortion it is recommended by the EUV lithography community that identical electrostatic chucks be used in the mask patterning and metrology tools. The high voltages used in electrostatic chucking have the potential to establish voltages on the mask surface, which may influence the electron optical characteristics of the pattern generator to the detrimental imaging of the pattern. To understand the relationship between image degradation and mask surface voltages, we are modeling the interaction between mask potential and electron beam columns. The first system modeled consists entirely of electrostatic elements, and the second one is a more traditional electron beam lithography system with electrostatic and magnetic components. All of the working parameters of the systems were fixed to establish optimal imaging on the grounded mask. We then altered the potential on the mask surface and determined the impact on focus and deflection errors. The simulation results establish the relationship between the mask potential, focus and deflection errors. Detailed data of focus deflection error versus mask potential will be presented for these electron beam column configurations. When combined with ITRS roadmap specifications, these results set boundaries on mask and chuck configurations as well as grounding schemes. The results are also applicable to charged particle maskless lithography schemes as well as issues of substrate charging in both pattern generators and metrology tools.

Citation Download Citation

Junru Ruan and John Hartley "Electron beam pattern generator sensitivity to target potentials", Proc. SPIE 5992, 25th Annual BACUS Symposium on Photomask Technology, 59924T (8 November 2005); https://doi.org/10.1117/12.631876

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KEYWORDS

Photomasks

Electron beams

Systems modeling

Extreme ultraviolet lithography

Data modeling

Electron beam lithography

Extreme ultraviolet

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