Process control and material properties of thin electroless Co-based capping layers for copper interconnects

Nicolai Petrov; Charles Valverde; Qingyun Chen; Chen Xu; Vincent Paneccasio; Daniel Stritch; Christian Witt; Elizabeth Walker; Jeff Barnes; Michael Pavlov; Eugene Shalyt

doi:10.1117/12.632504

22 November 2005 Process control and material properties of thin electroless Co-based capping layers for copper interconnects

Nicolai Petrov, Charles Valverde, Qingyun Chen, Chen Xu, Vincent Paneccasio, Daniel Stritch, Christian Witt, Elizabeth Walker, Jeff Barnes, Michael Pavlov, Eugene Shalyt

Author Affiliations +

Proceedings Volume 6002, Nanofabrication: Technologies, Devices, and Applications II; 60020O (2005) https://doi.org/10.1117/12.632504
Event: Optics East 2005, 2005, Boston, MA, United States

Abstract

Present work focuses on the process characteristics and material properties of electroless deposited CoWP, and CoWB thin layers. Such material properties as atomic and phase composition of thin Co alloys are compared. Consumption rates of the bath constituents are analyzed. Line resistance change of Cu interconnects capped with CoWP and CoWB is shown. Comparison of two types of capping layers and analysis of their process formation are presented. The capability of the selective capping layer formation on narrow Cu lines has been demonstrated.

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Nicolai Petrov, Charles Valverde, Qingyun Chen, Chen Xu, Vincent Paneccasio, Daniel Stritch, Christian Witt, Elizabeth Walker, Jeff Barnes, Michael Pavlov, and Eugene Shalyt "Process control and material properties of thin electroless Co-based capping layers for copper interconnects", Proc. SPIE 6002, Nanofabrication: Technologies, Devices, and Applications II, 60020O (22 November 2005); https://doi.org/10.1117/12.632504

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