PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
This paper describes the low-temperature bonding of a lithium niobate (LiNbO3) waveguide chip to a silicon (Si) substrate for integrated optical systems. The bonding was achieved by introducing the surface activation by plasma irradiation into the flip-chip bonding process. After the surfaces of the Au thin films (thickness: 100 nm) of the
LiNbO3 chip and the Si substrate were cleaned using an Ar radio frequency (RF) plasma, Au-Au bonding was carried out only by contact in ambient air with applied static pressure. The bonded chips fractured at bonding temperature higher than 150°C because of the coefficient of thermal expansion (CTE) mismatch. The LiNbO3 chips were successfully bonded to the Si substrates at relatively low temperature (100°C). The die-shear strength of the LiNbO3 chip was estimated to be more than 12 kg (3.8 MPa), the upper limit of our shear testing equipment.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Ryo Takigawa, Eiji Higurashi, Tadatomo Suga, Satoshi Shinada, Tetsuya Kawanishi, "Low temperature bonding of LiNbO3 waveguide chips to Si substrates in air," Proc. SPIE 6050, Optomechatronic Micro/Nano Devices and Components, 605012 (6 December 2005); https://doi.org/10.1117/12.653072