Type-II 450-550 nm InGaN-GaNAs for quantum well active region lasers and light emitters on GaN

Ronald A. Arif; Yik-Khoon Ee; Nelson Tansu

doi:10.1117/12.646174

28 February 2006 Type-II 450-550 nm InGaN-GaNAs for quantum well active region lasers and light emitters on GaN

Ronald A. Arif, Yik-Khoon Ee, Nelson Tansu

Proceedings Volume 6115, Physics and Simulation of Optoelectronic Devices XIV; 61150Y (2006) https://doi.org/10.1117/12.646174
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

We present and analyze a new nitride-based gain media by utilizing type-II InGaN-GaNAs quantum well (QW) on GaN. This novel III-N based type-II QW allows extension of the emission wavelength from blue regime (450-nm) to yellow regime (550-nm) with relatively-low In-content in the QW, while maintaining a large electron-hole wavefunction overlap. High electron-hole wavefunction overlap (≥ 65%-70%) can be obtained by careful energy band engineering to take advantage of the polarization-induced electric field. Our analysis shows this new type-II QW gain media offers wide emission wavelength coverage, from pure blue (~450-nm) to yellow-green (~530-nm). Design and optimization for pure blue (~450-nm), green (~515-nm) and yellow-green (~530-nm) emission structures are also presented. This method may allow realization of green laser diode on GaN, as well as paving the way to low cost, truly monolithic solid-state white light source.

Citation Download Citation

Ronald A. Arif, Yik-Khoon Ee, and Nelson Tansu "Type-II 450-550 nm InGaN-GaNAs for quantum well active region lasers and light emitters on GaN", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61150Y (28 February 2006); https://doi.org/10.1117/12.646174

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KEYWORDS

Quantum wells

Indium gallium nitride

Gallium nitride

Gallium

Light emitting diodes

Semiconductor lasers

Polarization

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