Hybrid CMOS compatible active/passive quenching module

F. Lin; C. Jackson; M. Mac Sweeney; M. Manning; M. M. Sheehan; A. Mathewson

doi:10.1117/12.643746

3 March 2006 Hybrid CMOS compatible active/passive quenching module

F. Lin, C. Jackson, M. Mac Sweeney, M. Manning, M. M. Sheehan, A. Mathewson

Proceedings Volume 6124, Optoelectronic Integrated Circuits VIII; 61241D (2006) https://doi.org/10.1117/12.643746
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

This paper demonstrates the experimental results of combining new state-of-the-art Geiger mode avalanche photodiodes with an integrated hybrid active/passive quenching circuit. This creates an ultra-compact form factor for a low-light level detection module. Both devices, the photodiode and the quenching circuit, are fabricated using conventional CMOS process technology and wafer substrates. The photodiodes operate at low voltage levels (30 V to 40V). Detector active areas are of various dimensions (10μm to 50μm) and shapes (circular, cylindrical or square). The integrated active/passive quenching circuit is included on a 2.5 mm × 2.5 mm die, which has the functionalities of bias conditioning, passive/active quench, output signal generation and active recharge. The prototypes are hybrid packaged onto a PCB substrate. The module is characterised for detecting very low level optical signals such as the single photon activities. Parameters such as dark counts, timing jitter, and responsivity will be shown for the compact detection module. Our findings show that the proposed avalanche photodiode operation is considerably faster than the conventional discrete systems and the module size is greatly reduced.

Citation Download Citation

F. Lin, C. Jackson, M. Mac Sweeney, M. Manning, M. M. Sheehan, and A. Mathewson "Hybrid CMOS compatible active/passive quenching module", Proc. SPIE 6124, Optoelectronic Integrated Circuits VIII, 61241D (3 March 2006); https://doi.org/10.1117/12.643746

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