Novel technique of antireflection coatings for semiconductor laser diodes

Mingju Nie; Deming Liu; Bichun Hu

doi:10.1117/12.674290

9 June 2006 Novel technique of antireflection coatings for semiconductor laser diodes

Mingju Nie, Deming Liu, Bichun Hu

Proceedings Volume 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies; 61492O (2006) https://doi.org/10.1117/12.674290
Event: 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2005, Xian, China

Abstract

Very strict requirements need to be met for producing a high-quality single-layer antireflection coating on laser diodes facets, In order to obtain a facet reflectivity of the order of 10^-4, the index of refraction and the layer thickness of single-layer coatings have to be controlled for better than ±0.02 and ±2nm. In this paper, a mixed source material composed of Zirconium Oxide(ZrO₂) and Titanium dioxide(TiO₂), whose index is appropriate to the single-layer antireflective coating for 1.5μm InGaAsP laser diodes is described, A new method to control the index of refraction; and a simple and accurate method to control the thickness of deposited layer as well as a novel measurement method of low residual reflectivity of Si wafer are also proposed. One facet coated LDs is driven and ASE spectra are measured. The center wavelength shifts about 50 nm from 1610 nm to 1560 nm and the ripple in the gain is less than 0.2 dB and the broad-band is about 35 nm when the reflectivity is less than 4×10^-4 by single layer.

Citation Download Citation

Mingju Nie, Deming Liu, and Bichun Hu "Novel technique of antireflection coatings for semiconductor laser diodes", Proc. SPIE 6149, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, 61492O (9 June 2006); https://doi.org/10.1117/12.674290

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