Resist Characterization And Optimization Using A Hevelonment Rimulation Romnuter Nrooram, Prostm.

Cesar M. Garza; Steven P. Grindle

doi:10.1117/12.963633

9 July 1986 Resist Characterization And Optimization Using A Hevelonment Rimulation Romnuter Nrooram, Prostm.

Cesar M. Garza, Steven P. Grindle

Proceedings Volume 0631, Advances in Resist Technology and Processing III; (1986) https://doi.org/10.1117/12.963633
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

Computer simulation is a well established tool in the design and processing of integrated circuits. The best known such simulation program in microlithography is SAMPLE (1), which is based on the Dill model (2). A new computer simulation program, PROSIM, has been developed (3). It uses the aerial image calculated by SAMPLE and the string development algorithm of SAMPLE, but replaces calculated photoresist development rates with rates measured using in-situ interferometry. Three different positive photoresist systems were investigated under varying process conditions typically examined during the characterization process. PROSIM simulated profiles and exposure latitudes are in good agreement with experimental measurements, showing that PROSIM can be used as an effective tool to aid in the characterization and optimization of positive resist processes.

Citation Download Citation

Cesar M. Garza and Steven P. Grindle "Resist Characterization And Optimization Using A Hevelonment Rimulation Romnuter Nrooram, Prostm.", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); https://doi.org/10.1117/12.963633

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