PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Experiments on GaAs polycrystal formation for isolation were made by using a combined system of a focused-ion-beam implanter with molecular-beam-epitaxy equipment. We obtained 0.7-μm-wide micropolycrystals of an aspect ratio of 3.5 above 160-keV-Be-implanted (more than lx1015 cm-2) GaAs epilayers. Micropolycrystals exhibited almost planar form and high resistivity even with donor doping of 3.2x10l8 cm-3. Single crystal regions adjacent to the micropolycrystals had good crystal quality which was confirmed by microscopic Raman spectroscopy. This new technique of micropolycrystal formation is attractive for planar isolation processing of GaAs devices with novel structures.
Yasuo Bamba,Eizo Miyauchi,Hiroshi Arimoto,Tetsuo Morita,Akira Takamori, andHisao Hashimoto
"Novel Submicron Isolation Technique Of Gaas Active Layer Using Fibi-Mbe", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); https://doi.org/10.1117/12.963684
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.