Paper
25 October 2006 Fabrication of a monolithically integrated multiple wavelength Fabry-Perot filter array using transparent etch stop layers for accurate wavelength determination
Diana Convey, Ngoc Le, Steven M. Smith, Paige Holm, Jeffrey Baker
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Abstract
In this paper we describe a method of fabricating a Fabry-Perot filter array consisting of four distinct wavelengths using a stopping layer, which in turn is discriminately measured. Precise control of the oxide thickness is demonstrated by using reflectance to measure center wavelengths (CWL) between 645nm-822nm with full width half maximum (FWHM) values of 15 nm. These parameters are used to confirm good narrow band filter characteristics. The physical and chemical properties of an oxide layer converted from a silicon-carbon-nitride (SiCN) etch stop layer (ESL) is reported for both as-deposited and the resultant oxidized film. The filter array can be fabricated directly on top of silicon photo diodes, to form a complete multi-wavelength sensor system. Fabricating a multi-wavelength filter array using etch-stop layers can provide better thickness control and across wafer uniformity compared to a timed-etch approach.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Diana Convey, Ngoc Le, Steven M. Smith, Paige Holm, and Jeffrey Baker "Fabrication of a monolithically integrated multiple wavelength Fabry-Perot filter array using transparent etch stop layers for accurate wavelength determination", Proc. SPIE 6378, Chemical and Biological Sensors for Industrial and Environmental Monitoring II, 637815 (25 October 2006); https://doi.org/10.1117/12.684937
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Cited by 2 patents.
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KEYWORDS
Etching

Fabry–Perot interferometers

Oxides

Mirrors

Reflectivity

Silicon

Dielectric filters

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