Optical properties of <i>n</i>- and <i>p</i>-type ZnO thin films: two different approaches to the impurity distribution inhomogeneity

Takayuki Makino

doi:10.1117/12.697515

8 February 2007 Optical properties of n- and p-type ZnO thin films: two different approaches to the impurity distribution inhomogeneity

Takayuki Makino

Author Affiliations +

Proceedings Volume 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV; 64710K (2007) https://doi.org/10.1117/12.697515
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We investigated the optical properties of epitaxial n- and p-type ZnO films grown on lattice-matched ScAlMgO₄ substrates. Chemical doping yielded a severe inhomogeneity in a statistical distribution of involved charged impurities. Two approaches are adopted to treat the inhomogeneity effects; Monte Carlo simulation technique for the n-doped films, and the fluctuation theory for the p-ZnO. The broadening of PL band of n-ZnO was significantly larger than predicted by theoretical results in which the linewidths of each individual emissions have been determined mainly from the concentration fluctuation of donor-type dopants by the simulation. Moreover, the rather asymmetrical line shape was observed. To explain these features, a vibronic model was developed accounting for contributions from a series of phonon replicas. In case of p-type ZnO:N, analysis of excitation-intensity dependence of the peak shift of donor-acceptor luminescence with a fluctuation model has also proven the importance of the inhomogeneity effect of charged impurity distribution, as in the case of ZnO:Ga. We extracted the inhomogeneity in the sample and acceptor activation energy prepared under the various growth conditions. It is shown that the theoretical results are in good agreement with the experimental 5-K time-resolved luminescence for the systems in a fluctuation field. Finally, localized-state distributions have been studied in N-doped ZnO thin films by means of transient photocurrent measurement.

Citation Download Citation

Takayuki Makino "Optical properties of n- and p-type ZnO thin films: two different approaches to the impurity distribution inhomogeneity", Proc. SPIE 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV, 64710K (8 February 2007); https://doi.org/10.1117/12.697515

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available