Analysis of localization dynamics of excitons in ZnO-related quantum wells by Monte-Carlo simulation

Takayuki Makino

doi:10.1117/12.711898

20 February 2007 Analysis of localization dynamics of excitons in ZnO-related quantum wells by Monte-Carlo simulation

Takayuki Makino

Proceedings Volume 6474, Zinc Oxide Materials and Devices II; 647403 (2007) https://doi.org/10.1117/12.711898
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

A quantitative interpretation of the anomalous temperature behavior is presented to describe the so-called "S-shape dependence" of the photoluminescence (PL) in ZnO-related quantum well layers by using an appropriate modeling and simulation. Experimental data for CdZnO/MgZnO and ZnO/MgZnO samples are modeled using Monte Carlo simulations of the involved relaxation mechanisms and thus providing a realistic picture of the excitonic kinetics. The temperature dependence of the PL maximum and full-width at half maximum could be simultaneously reproduced with reasonably good accuracy. Several informations about the distribution of the localization potential wells and identify their hopping transfers between separated states are deduced. We found that the temperature-dependent PL linewidth and Stokes shift is in a qualitatively reasonable agreement with the above-mentioned model, with accounting for an additional inhomogeneous broadening for the case of linewidth for CdZnO quantum wells. The density of localized states used in the simulation for the CdZnO QW was consistent with the absorption spectrum taken at 5 K.

Citation Download Citation

Takayuki Makino "Analysis of localization dynamics of excitons in ZnO-related quantum wells by Monte-Carlo simulation", Proc. SPIE 6474, Zinc Oxide Materials and Devices II, 647403 (20 February 2007); https://doi.org/10.1117/12.711898

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KEYWORDS

Excitons

Quantum wells

Monte Carlo methods

Luminescence

Zinc oxide

Temperature metrology

Zinc

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