Contact leakage and open monitoring with an advanced e-beam inspection system

Shuen-chen Lei; Hermes Liu; Mingsheng Tsai; Hung-Chi Wu; Hong Xiao; Jack Jau

doi:10.1117/12.711761

5 April 2007 Contact leakage and open monitoring with an advanced e-beam inspection system

Shuen-chen Lei, Hermes Liu, Mingsheng Tsai, Hung-Chi Wu, Hong Xiao, Jack Jau

Proceedings Volume 6518, Metrology, Inspection, and Process Control for Microlithography XXI; 65184I (2007) https://doi.org/10.1117/12.711761
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

In this study, we used optimized negative mode to detect N+/P-well contact open and P+/N-well contact leakage. We found the optimized contact process condition to eliminate both contact open and leakage. Electron beam (e-beam) inspection results strongly correlate with die yield. We implemented negative mode e-beam defect inspection along with positive mode inspection for effective inline monitoring to accelerate the 65 nm process yield ramp.

Citation Download Citation

Shuen-chen Lei, Hermes Liu, Mingsheng Tsai, Hung-Chi Wu, Hong Xiao, and Jack Jau "Contact leakage and open monitoring with an advanced e-beam inspection system", Proc. SPIE 6518, Metrology, Inspection, and Process Control for Microlithography XXI, 65184I (5 April 2007); https://doi.org/10.1117/12.711761

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