Stable 600°C silicon carbide MEMS pressure transducers

Robert S. Okojie

doi:10.1117/12.723406

3 May 2007 Stable 600°C silicon carbide MEMS pressure transducers

Robert S. Okojie

Author Affiliations +

Proceedings Volume 6555, Sensors and Systems for Space Applications; 65550V (2007) https://doi.org/10.1117/12.723406
Event: Defense and Security Symposium, 2007, Orlando, Florida, United States

Abstract

This paper presents a review of recent results of silicon carbide (SiC) piezoresistive pressure transducers that have been demonstrated to operate up to 600 °C. The results offer promise to extend pressure measurement to higher temperatures beyond the capability of conventional semiconductor pressure transducers. The development also provides three immediate significant technological benefits: i) wider frequency bandwidth (overcomes acoustic attenuation associated with pitot tubes), ii) accuracy (improved stable output at high temperature), and iii) reduced packaging complexity (no package cooling required). Operation at 600 °C provides immediate applications in military and commercial jet engines in which critical static and dynamic pressure measurements are performed to improve engine performance (i.e., reduced emission and combustor instabilities) and improved CFD code validation. The pressure sensor is packaged by a novel MEMS direct chip attach (MEMS-DCA) technique that eliminates the need for wire bonding, thereby removing some reliability issues encountered at high temperature. Generally, at 600 °C the full-scale output (FSO) of these transducers drops by about 50-65 % of the room temperature values, which can be compensated for with external signal conditioning circuitry.

Citation Download Citation

Robert S. Okojie "Stable 600°C silicon carbide MEMS pressure transducers", Proc. SPIE 6555, Sensors and Systems for Space Applications, 65550V (3 May 2007); https://doi.org/10.1117/12.723406

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