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We had investigated effects of the high-energy proton irradiation on the properties of radiation detectors fabricated as
Schottky diodes on 4H-SiC. The doses of 24 GeV protons ranged from 1013 cm-2 up to 1016 cm-2. Numbers and activities
of radionuclides and isotopes produced after the irradiation were analysed. Activities of 7Be and 22Na were found to be
proportional to the irradiation dose and ranged from 1.3 up to 890 Bq and from 1.9 up to 950 Bq, respectively. The
contact properties were investigated by means of the current-voltage analysis. At lower irradiation doses a slight
decrease of the effective potential barrier height from about 0.75 eV down to < 0.7 eV took place. The reverse current of
the diodes grew by up to one order of magnitude. At the doses above 3x1015 cm-2 opposite changes were observed.
Irradiation by up to 1x1016 protons/cm-2, resulted in the increase of the potential barrier height up to ~ 0.85 eV, followed
by the drop of the reverse current by up to two orders of magnitude. The observed effects were explained by the
appearance of the disordered material structure because of the high-energy particle bombardment.
Vaidotas Kažukauskas,Rimvydas Jasiulionis,Vidmantas Kalendra, andJuozas-Vidmantis Vaitkus
"Variation of the properties of 4H-SiC radiation detectors upon
irradiation by 24 GeV protons", Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 65960B (25 January 2007); https://doi.org/10.1117/12.726366
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Vaidotas Kažukauskas, Rimvydas Jasiulionis, Vidmantas Kalendra, Juozas-Vidmantis Vaitkus, "Variation of the properties of 4H-SiC radiation detectors upon irradiation by 24 GeV protons," Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 65960B (25 January 2007); https://doi.org/10.1117/12.726366