Paper
25 January 2007 Phonon sidebands in photoluminescence of beryllium &dgr;-doped GaAs/AlAs multiple quantum wells
Jurgis Kundrotas, Aurimas Čerškus, Agnė Johannessen, Steponas Ašmontas, Gintaras Valušis, Matthew P. Halsall, Paul Harrison
Author Affiliations +
Proceedings Volume 6596, Advanced Optical Materials, Technologies, and Devices; 659612 (2007) https://doi.org/10.1117/12.726488
Event: Advanced Optical Materials, Technologies, and Devices, 2006, Vilnius, Lithuania
Abstract
We present a study of phonon sidebands in the photoluminescence spectra of Be acceptor-doped GaAs/AlAs multiple quantum wells at liquid nitrogen temperature. Up to two phonon satellites with a separation close to the GaAs longitudinal optical phonon energy are observed in the sideband of the photoluminescence. A theoretical analysis of the satellite-related photoluminescence lineshapes and their energetic position and impurity induced spectra is presented. The results show that the phonon satellites can be attributed to free-electron-Be acceptor transitions involving longitudinal optical phonon of GaAs - the host material of the studied quantum wells.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jurgis Kundrotas, Aurimas Čerškus, Agnė Johannessen, Steponas Ašmontas, Gintaras Valušis, Matthew P. Halsall, and Paul Harrison "Phonon sidebands in photoluminescence of beryllium &dgr;-doped GaAs/AlAs multiple quantum wells", Proc. SPIE 6596, Advanced Optical Materials, Technologies, and Devices, 659612 (25 January 2007); https://doi.org/10.1117/12.726488
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KEYWORDS
Beryllium

Phonons

Gallium arsenide

Quantum wells

Luminescence

Nitrogen

Liquids

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