The p-n junctions on the basis of CdxHg1-xTe obtained by low-energy treatment with indium and argon ions

N. D. Ismayilov; E. K. Huseynov; I. S. Hasanov; S. A. Heydarov

doi:10.1117/12.742617

26 April 2007 The p-n junctions on the basis of Cd_xHg_1-xTe obtained by low-energy treatment with indium and argon ions

N. D. Ismayilov, E. K. Huseynov, I. S. Hasanov, S. A. Heydarov

Author Affiliations +

Proceedings Volume 6636, 19th International Conference on Photoelectronics and Night Vision Devices; 663615 (2007) https://doi.org/10.1117/12.742617
Event: 19th International Conference on Photoelectronics and Night Vision Devices, 2006, Moscow, Russian Federation

Abstract

The results of experimental research of properties of photodiode structures based on Cd_xHg_1-xTe fabricated by method of treatment of p-type material surface with indium ions with energy 1-5 keV and argon ions with energy 250 eV are introduced. By analysis of electrical and photoelectrical properties obtained structures made conclusion about more quality structure obtained by treatment with indium ions than one with argon ions. Supposed that it is related with more than two order less closes of indium ions than argon ions required to from the conversion layer.

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N. D. Ismayilov, E. K. Huseynov, I. S. Hasanov, and S. A. Heydarov "The p-n junctions on the basis of Cd_xHg_1-xTe obtained by low-energy treatment with indium and argon ions", Proc. SPIE 6636, 19th International Conference on Photoelectronics and Night Vision Devices, 663615 (26 April 2007); https://doi.org/10.1117/12.742617

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