Theoretical treatment of the first-order hyper-Raman scattering in semiconductors

L. E. Semenova; K. A. Prokhorov

doi:10.1117/12.751979

27 July 2007 Theoretical treatment of the first-order hyper-Raman scattering in semiconductors

L. E. Semenova, K. A. Prokhorov

Proceedings Volume 6729, ICONO 2007: Coherent and Nonlinear Optical Phenomena; 67292Q (2007) https://doi.org/10.1117/12.751979
Event: The International Conference on Coherent and Nonlinear Optics, 2007, Minsk, Belarus

Abstract

The hyper-Raman scattering by LO phonons is theoretically investigated, taking into account the Wannier excitons as intermediate virtual states. The different scattering mechanisms are considered. The hyper-Raman efficiency as a function of the energy of incident photons is calculated for ZnSe, ZnO, CdS and GaN.

Citation Download Citation

L. E. Semenova and K. A. Prokhorov "Theoretical treatment of the first-order hyper-Raman scattering in semiconductors", Proc. SPIE 6729, ICONO 2007: Coherent and Nonlinear Optical Phenomena, 67292Q (27 July 2007); https://doi.org/10.1117/12.751979

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