Pattern split rules! A feasibility study of rule based pitch decomposition for double patterning

Anton van Oosten; Peter Nikolsky; Judy Huckabay; Ronald Goossens; Robert Naber

doi:10.1117/12.746689

16 November 2007 Pattern split rules! A feasibility study of rule based pitch decomposition for double patterning

Anton van Oosten, Peter Nikolsky, Judy Huckabay, Ronald Goossens, Robert Naber

Proceedings Volume 6730, Photomask Technology 2007; 67301L (2007) https://doi.org/10.1117/12.746689
Event: SPIE Photomask Technology, 2007, Monterey, California, United States

Abstract

To fulfill Moore's law the R&D stage of 3x nm HP nodes will have to be reached in 2008. Conventional DUV immersion technology is resolution limited to half pitch values exceeding 40 nm. Double Patterning Technology (DPT) is a major candidate to reach the 3x nm node in time. Geometrical pattern split, doubling the pitch, is one of the major steps of DPT. We present a feasibility study of the Rule Based (RB) DPT approach to pattern splitting based on a representative and reviewed selection of clips and full-mask designs.

Citation Download Citation

Anton van Oosten, Peter Nikolsky, Judy Huckabay, Ronald Goossens, and Robert Naber "Pattern split rules! A feasibility study of rule based pitch decomposition for double patterning", Proc. SPIE 6730, Photomask Technology 2007, 67301L (16 November 2007); https://doi.org/10.1117/12.746689

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