Simple and effective algorithm of inorganic resist As2S3 development simulation

D. V. Myagkov

doi:10.1117/12.752228

28 June 2007 Simple and effective algorithm of inorganic resist As₂S₃ development simulation

D. V. Myagkov

Proceedings Volume 6732, International Conference on Lasers, Applications, and Technologies 2007: Laser-assisted Micro- and Nanotechnologies; 67321V (2007) https://doi.org/10.1117/12.752228
Event: International Conference on Lasers, Applications, and Technologies '07, 2007, Minsk, Belarus

Abstract

A simple and effective method of computer simulation of inorganic photoresist based on chalcogenide glass As₂S₃ development is proposed. The photoresist is exposed by interference photolithography, which is a promising technology for large-scale producing of subwavelength surface relief grating. The influence of exposure and photoresist parameters was investigated in order to produce periodical structure with a period of almost half of exposing wavelength.

Citation Download Citation

D. V. Myagkov "Simple and effective algorithm of inorganic resist As₂S₃ development simulation", Proc. SPIE 6732, International Conference on Lasers, Applications, and Technologies 2007: Laser-assisted Micro- and Nanotechnologies, 67321V (28 June 2007); https://doi.org/10.1117/12.752228

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