The effect of temperature and gas flow on the physical vapour growth of mm-scale rubrene crystals for organic FETs

A. R. Ullah; A. P. Micolich; J. W. Cochrane; A. R. Hamilton

doi:10.1117/12.759015

9 January 2008 The effect of temperature and gas flow on the physical vapour growth of mm-scale rubrene crystals for organic FETs

A. R. Ullah, A. P. Micolich, J. W. Cochrane, A. R. Hamilton

Author Affiliations +

Proceedings Volume 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV; 680005 (2008) https://doi.org/10.1117/12.759015
Event: SPIE Microelectronics, MEMS, and Nanotechnology, 2007, Canberra, ACT, Australia

Abstract

There has recently been significant interest in rubrene single-crystals grown using physical vapour transport techniques due to their application in high-mobility organic field-effect transistor (OFET) devices. Despite numerous studies of the electrical properties of such crystals, there has only been one study to date focussing on characterising and optimising the crystal growth as a function of the relevant growth parameters. Here we present a study of the dependence of the yield of useful crystals (defined as crystals with at least one dimension of order 1 mm) on the temperature and volume flow of carrier gas used in the physical vapour growth process.

Citation Download Citation

A. R. Ullah, A. P. Micolich, J. W. Cochrane, and A. R. Hamilton "The effect of temperature and gas flow on the physical vapour growth of mm-scale rubrene crystals for organic FETs", Proc. SPIE 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, 680005 (9 January 2008); https://doi.org/10.1117/12.759015

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