Characteristic comparisons of Yb-Er co-doped Al2O3 waveguide amplifiers with different geometric structures

Shufeng Li; Chengren Li; Zhongfan Liu; Wenxuan Zhu; Changlie Song

doi:10.1117/12.759400

8 January 2008 Characteristic comparisons of Yb-Er co-doped Al₂O₃ waveguide amplifiers with different geometric structures

Shufeng Li, Chengren Li, Zhongfan Liu, Wenxuan Zhu, Changlie Song

Author Affiliations +

Proceedings Volume 6838, Optoelectronic Devices and Integration II; 68380K (2008) https://doi.org/10.1117/12.759400
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

Guiding modes and field distribution are calculated by finite element method. For three kinds of etched cross-section waveguide (rectangle, trapezoid, upside-down trapezoid) with 0.5μm and 1.0μm film thickness, mode characteristic, percentage of core power at wavelength of 1.53μm and 0.98μm and overlap factor between signal and pump are contrastively studied. For the same etched depth and mask width, trapezoid waveguide is superior to rectangle and then upside-down trapezoid in the view of field confinement and overlap factor. Whereas rectangle waveguide is optimum and upside-down trapezoid is the worst for the same core cross-section area. The gain of different etched cross-section waveguide amplifier is numerically calculated by multi-theoretical model, which is founded by rate equations pumped at 0.98μm, two-dimension waveguide finite element model, propagation equations with forward and backward direction amplified spontaneous emission. Results also show rectangle waveguide is optimum for the same core cross-section area. The gain of 1μm film thickness waveguide amplifier increases by more than 20% compared with 0.5μm thickness waveguide. These simulation results provide a theoretical basis for the design of Yb-Er co-doped Al₂O₃ waveguide amplifiers.

Citation Download Citation

Shufeng Li, Chengren Li, Zhongfan Liu, Wenxuan Zhu, and Changlie Song "Characteristic comparisons of Yb-Er co-doped Al₂O₃ waveguide amplifiers with different geometric structures", Proc. SPIE 6838, Optoelectronic Devices and Integration II, 68380K (8 January 2008); https://doi.org/10.1117/12.759400

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