Study of photovoltaic characteristics of diffuse-processed porous silicon and ion-implanted porous silicon

Mei Xiang; Zhenhong Jia

doi:10.1117/12.756673

4 January 2008 Study of photovoltaic characteristics of diffuse-processed porous silicon and ion-implanted porous silicon

Mei Xiang, Zhenhong Jia

Author Affiliations +

Proceedings Volume 6841, Solid State Lighting and Solar Energy Technologies; 68411W (2008) https://doi.org/10.1117/12.756673
Event: Photonics Asia 2007, 2007, Beijing, China

Abstract

Diffuse processes on the p-type single crystal silicon produced the p-n junction. Porous silicon was prepared by using oxidation etching on the surface of the single crystal with p-n junction. A quantum-sized thin film of TiO₂ was deposited by reactive magnetron sputtering on the p-n junction. The results obtained by the surface photovoltage spectroscope (SPS) showed that the photovoltage of TiO₂/n-Si/p-Si and n-PS/p-PS/Si increase than the photovoltage of n-Si/p-Si. In 300~600 °C, the photovoltage of TiO₂/n-Si/p-Si was enhancing with the rise of temperature, but the photovoltage of TiO₂/n-Si/p-Si was reducing with the rise of temperature in 600~800 °C. The effects of different ion-implantation in single crystal silicon and porous silicon on the photovoltaic characteristics are studied, the photovoltage of argon implanted samples and nitrogen implanted samples was increased a lot beyond the photovoltage of non-implanted samples.

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Mei Xiang and Zhenhong Jia "Study of photovoltaic characteristics of diffuse-processed porous silicon and ion-implanted porous silicon", Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68411W (4 January 2008); https://doi.org/10.1117/12.756673

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