Spectroscopic ellipsometry characterization of silicon/silicon-dioxide superlattices for photoluminescence and electroluminescence

Tim Creazzo; Lindsay Prather; Brandon Redding; Shouyuan Shi; Dennis Prather

doi:10.1117/12.768709

6 February 2008 Spectroscopic ellipsometry characterization of silicon/silicon-dioxide superlattices for photoluminescence and electroluminescence

Tim Creazzo, Lindsay Prather, Brandon Redding, Shouyuan Shi, Dennis Prather

Author Affiliations +

Proceedings Volume 6883, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics; 68830P (2008) https://doi.org/10.1117/12.768709
Event: MOEMS-MEMS 2008 Micro and Nanofabrication, 2008, San Jose, California, United States

Abstract

Silicon based light emitting materials are of particular interest for integrating electric and photonic devices into an allsilicon platform. The progress of nano-scale fabrication has led to the ability to realize silicon emitters based on quantum confinement mechanisms. Quantum confinement in nano-structured silicon overcomes the indirect bandgap present in bulk silicon allowing for radiative emissions. Silicon/silicon dioxide superlattices employ two-dimensional confinement leading to light emission. Strong photoluminescence (PL) has been demonstrated in Si/SiO₂ superlattices, confirming the presence of quantum confinement effects. Our super lattice structures are grown using plasma enhanced chemical vapor deposition (PECVD) with alternating layers of silicon and silicon dioxide. Sub-10 nanometer periods are confirmed via transmission electron microscopy (TEM) and x-ray reflectivity (XRR) studies. However, consistent and predictable PL and electroluminescence (EL) relies on precise measurement and characterization of the deposition process. Spectroscopic ellipsometry (SE) offers a non-destructive extremely sensitive method of optical characterization which provides us with the required control. We present characterization of our superlattice structures using spectroscopic ellipsometry. The ellipsometer allows us to measure optical properties of the individual layers of ultra-thin silicon as a part of Si/SiO₂ superlattices. We demonstrate the change in the imaginary part of the dielectric function and the bandgap for a-Si. We also generate deposition rate curves for very specific PECVD recipes and apply this information to further SE characterization and modeling of multi-period superlattice structures.

Citation Download Citation

Tim Creazzo, Lindsay Prather, Brandon Redding, Shouyuan Shi, and Dennis Prather "Spectroscopic ellipsometry characterization of silicon/silicon-dioxide superlattices for photoluminescence and electroluminescence", Proc. SPIE 6883, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics, 68830P (6 February 2008); https://doi.org/10.1117/12.768709

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