Paper
29 February 2008 Giant nonlinear gain coefficient of an InAs/AlGaInAs quantum dot laser
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Abstract
The linewidth enhancement factor (LEF) and nonlinear gain coefficient of an InAs/AlGaInAs quantum dot (QD) laser are measured using an injection locking technique. The nonlinear gain coefficient was found by curve-fitting the measured LEF as a linear function of the output power. The LEF of the InAs/AlGaInAs quantum dot laser was measured to be 1.2 to 8.6 at output powers from 2 to 10.2 mW, leading to a corresponding nonlinear gain coefficient of 1.4 x 10-14 cm3. This value for the nonlinear gain coefficient is three orders of magnitude higher than the typical quantum well nonlinear gain coefficient of 10-17 cm3. Consequently we expect that the dynamics under optical injection and external feedback of this type of quantum dot laser will be dramatically different than in quantum well lasers, suggesting that a careful re-examination of the dynamics of this type of laser is needed.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. F. Lester, N. B Terry, A. J. Moscho, M. L. Fanto, N. A. Naderi, Y. Li, and V. Kovanis "Giant nonlinear gain coefficient of an InAs/AlGaInAs quantum dot laser", Proc. SPIE 6889, Physics and Simulation of Optoelectronic Devices XVI, 68890M (29 February 2008); https://doi.org/10.1117/12.767766
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Cited by 3 scholarly publications.
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KEYWORDS
Quantum dot lasers

Semiconductor lasers

Quantum wells

Oscillators

Laser damage threshold

Chaos

Four wave mixing

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