Ion implantation of B ions into CdHgTe/CdZnTe substrate and determination of optimum optical characteristics for making diode p-n structures in narrow(-band)-gap semiconductor material CdHgTe/CdZnTe

Ruslana S. Udovitska; Genadiy V. Kalisty; Vladimir V. Fedulov

doi:10.1117/12.768610

22 February 2008 Ion implantation of B ions into CdHgTe/CdZnTe substrate and determination of optimum optical characteristics for making diode p-n structures in narrow(-band)-gap semiconductor material CdHgTe/CdZnTe

Ruslana S. Udovitska, Genadiy V. Kalisty, Vladimir V. Fedulov

Author Affiliations +

Proceedings Volume 6890, Optical Components and Materials V; 68900O (2008) https://doi.org/10.1117/12.768610
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

The samples were prepared from CdZnTe substrate with thickness of 600µm, on wich thin CdHgTe (KRT) thin films with thicknesses of 16µm, 18.75 µm and the same sample with KRT thin film with thickness 21.6µm was coated by diamond thin film with thickness of 30nm. B ion implantation into KRT film on CdZnTe substrate was made with purpose of investigation of volt-ampere characteristics and defects formation. Ion doping of B in KRT with doses of (D=3.4 mCl/cm2, D=6.8 mCl/cm2) and energies (50 keV, 100 keV, 150 keV). The calculations by SRIM-TRIM 2003 software for condition of maximum ion distribution on the interface "filmsubstrate" have shown that the optimal energy is 100 keV for all mentioned samples. The results also have shown that implantation at ions energy 100 keV is optimal for form diode p-n structures in narrow(-band)-gap semiconductor material CdHgTe/CdZnTe.

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Ruslana S. Udovitska, Genadiy V. Kalisty, and Vladimir V. Fedulov "Ion implantation of B ions into CdHgTe/CdZnTe substrate and determination of optimum optical characteristics for making diode p-n structures in narrow(-band)-gap semiconductor material CdHgTe/CdZnTe", Proc. SPIE 6890, Optical Components and Materials V, 68900O (22 February 2008); https://doi.org/10.1117/12.768610

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