P-type ZnO thin films via phosphorus doping

D. P. Norton; H. S. Kim; J. M Erie; S. J. Pearton; Y. L. Wang; F. Ren

doi:10.1117/12.785467

15 February 2008 P-type ZnO thin films via phosphorus doping

D. P. Norton, H. S. Kim, J. M Erie, S. J. Pearton, Y. L. Wang, F. Ren

Proceedings Volume 6895, Zinc Oxide Materials and Devices III; 68950W (2008) https://doi.org/10.1117/12.785467
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

ZnO is a wide bandgap semiconductor that exhibits properties that are near-ideal for light-emitting diodes, but presents materials challenges that must be overcome in order to achieve highly efficient light emission. The most significant issue with ZnO is p-type doping. Related materials issues include understanding electron-hole transport across pn junctions, as well as understanding and minimizing leakage current paths within the bulk and on the surface. In this paper, the formation and properties of phosphorus-doped Zn_1-xMg_xO films, ZnO-based pn homojunctions and heterojunctions is discussed. The behavior of phosphorus within the ZnO and ZnMgO matrices will be described. Comparisons with other acceptor dopants will be made. Discussion will include stability of transport properties, stabilization of surfaces, and device characteristics.

Citation Download Citation

D. P. Norton, H. S. Kim, J. M Erie, S. J. Pearton, Y. L. Wang, and F. Ren "P-type ZnO thin films via phosphorus doping", Proc. SPIE 6895, Zinc Oxide Materials and Devices III, 68950W (15 February 2008); https://doi.org/10.1117/12.785467

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