A comparative study on the dielectric functions of isolated Si nanocrystals and densely stacked Si nanocrystal layer embedded in SiO2 synthesized with Si ion implantation

L. Ding; T. P. Chen; Y. Liu; Y. C. Liu

doi:10.1117/12.762600

13 February 2008 A comparative study on the dielectric functions of isolated Si nanocrystals and densely stacked Si nanocrystal layer embedded in SiO₂ synthesized with Si ion implantation

L. Ding, T. P. Chen, Y. Liu, Y. C. Liu

Author Affiliations +

Proceedings Volume 6898, Silicon Photonics III; 68980I (2008) https://doi.org/10.1117/12.762600
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

Both isolated Si nanocrystals (nc-Si) dispersedly distributed in a SiO₂ matrix and densely stacked nc-Si layers embedded in SiO₂ have been synthesized with the ion implantation technique followed by high temperature annealing. The dielectric functions of the isolated nc-Si and densely-stacked nc-Si layer embedded in SiO₂ have been determined with spectroscopic ellipsometry (SE) in the photon energy range of 1.1-5 eV. The dielectric functions of these two different Si nanostructures were successfully extracted from the SE fitting based on a multi-layer fitting model that takes into account the distribution of nc-Si in SiO2 and a five phase model (i.e., air/SiO₂ layer/densely-stacked nc-Si layer/SiO₂ layer/Si), respectively. The dielectric spectra of isolated nc-Si distributed in SiO₂ present a two-peak structure, while the dielectric spectra of densely-stacked nc-Si layer show a single broad peak, being similar to that of amorphous Si. The dielectric functions of these two Si nanostructures both show significant suppressions as compared with bulk crystalline Si. However, it has been observed that the densely stacked nc-Si layer exhibits a more significant suppression in the dielectric spectra than the isolated nc-Si dispersedly embedded in SiO₂. This is probably related to the two factors: (i) the nc-Si size (~3 nm) of the densely stacked nc-Si layer is smaller than that (~4.5 nm) of the isolated nc-Si embedded in SiO₂ matrix, and (ii) the densely stacked nc-Si layer has an amorphous phase.

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L. Ding, T. P. Chen, Y. Liu, and Y. C. Liu "A comparative study on the dielectric functions of isolated Si nanocrystals and densely stacked Si nanocrystal layer embedded in SiO₂ synthesized with Si ion implantation", Proc. SPIE 6898, Silicon Photonics III, 68980I (13 February 2008); https://doi.org/10.1117/12.762600

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KEYWORDS

Silicon

Silica

Dielectrics

Nanocrystals

Crystals

Ion implantation

Thin films

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