Improvements of adhesion and hydrophobicity of wafer bevel in water immersion lithography

Takeo Ishibash; Mamoru Terai; Takuya Hagiwara; Teruhiko Kumada; Tetsuro Hanawa; Yoko Takebe; Osamu Yokokoji; Tomoharu Fujiwara; Hiroshi Akiyama

doi:10.1117/12.771794

26 March 2008 Improvements of adhesion and hydrophobicity of wafer bevel in water immersion lithography

Takeo Ishibash, Mamoru Terai, Takuya Hagiwara, Teruhiko Kumada, Tetsuro Hanawa, Yoko Takebe, Osamu Yokokoji, Tomoharu Fujiwara, Hiroshi Akiyama

Author Affiliations +

Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 69231V (2008) https://doi.org/10.1117/12.771794
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

In this study, we focus on the controllability of a wafer bevel from adhesion and hydrophobicity viewpoints in order to solve the problems of film peeling and microdroplet formation around wafer bevels, which result in pattern defects. Hexamethyldisilazane (HMDS) treatment is a common solution to these problems. We examine a novel wafer bevel treatment utilizing silane coupling agents (SCAs) for obtaining high adhesion and hydrophobicity. SCAs comprise trimethoxysilanol and organic functional groups. These groups react with inorganic substrates and films just over the surface subjected to a novel chemical treatment (NCT), respectively. Several organic functional groups both with and without fluorine are examined. The hydrophobicity is estimated from the static and receding contact angles of water. The adhesion strength is measured from the stress required for pulling the topcoat film away from the substrate subjected to the NCT. The coating performance of chemicals on the surface by the NCT and the aging stability of the formulated solution of the SCAs are examined for optimizing the composition of the NCT solution. Further, we verify the film peeling behavior and water leakage in wafers having a topcoat, ArF resist, and bottom antireflective coating (BARC) using a quasi-immersion exposure stage.

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Takeo Ishibash, Mamoru Terai, Takuya Hagiwara, Teruhiko Kumada, Tetsuro Hanawa, Yoko Takebe, Osamu Yokokoji, Tomoharu Fujiwara, and Hiroshi Akiyama "Improvements of adhesion and hydrophobicity of wafer bevel in water immersion lithography", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69231V (26 March 2008); https://doi.org/10.1117/12.771794

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KEYWORDS

Semiconducting wafers

Coating

Silicon

Head-mounted displays

Immersion lithography

Manufacturing

Fluorine

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