Process variation in metal-oxide-metal (MOM) capacitors

Lynn Tao-Ning Wang

doi:10.1117/12.773197

18 March 2008 Process variation in metal-oxide-metal (MOM) capacitors

Lynn Tao-Ning Wang

Proceedings Volume 6925, Design for Manufacturability through Design-Process Integration II; 69251M (2008) https://doi.org/10.1117/12.773197
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Aerial image simulation of interdigitated sidewall capacitor layouts and extraction of feature changes are used to estimate the parametric performance spread of DC Metal-Oxide-Metal (MOM) mixed signal capacitors as a function of the normalized lithographic resolution k1. Since minimum feature sizes are utilized, the variation of MOM capacitors is attributed to lithography spacing. In this paper, k1 of 0.8, 0.56, 0.40, and 0.28 are studied. The DC capacitance shows a worst-case variability of 42%. While line-end-shortening is a small fractional change in finger length and proves to be not a critical factor in variability, spacing width proves to be the main source of the variability in DC capacitance. Different annular illumination settings are explored for mitigating the variability in spacing width. Co-design of the pitch and illumination shows that for each k1, there is an optimal annular illumination radius. The optimal set of sigmas (i.e. sigma_in and sigma_out) can control the variability between linewidths and spacing widths to 20%.

Citation Download Citation

Lynn Tao-Ning Wang "Process variation in metal-oxide-metal (MOM) capacitors", Proc. SPIE 6925, Design for Manufacturability through Design-Process Integration II, 69251M (18 March 2008); https://doi.org/10.1117/12.773197

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