Wafer plane inspection for advanced reticle defects

Rajesh Nagpal; Firoz Ghadiali; Jun Kim; Tracy Huang; Song Pang

doi:10.1117/12.793058

19 May 2008 Wafer plane inspection for advanced reticle defects

Rajesh Nagpal, Firoz Ghadiali, Jun Kim, Tracy Huang, Song Pang

Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70281H (2008) https://doi.org/10.1117/12.793058
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan

Abstract

Readiness of new mask defect inspection technology is one of the key enablers for insertion & transition of the next generation technology from development into production. High volume production in mask shops and wafer fabs demands a reticle inspection system with superior sensitivity complemented by a low false defect rate to ensure fast turnaround of reticle repair and defect disposition (W. Chou et al 2007). Wafer Plane Inspection (WPI) is a novel approach to mask defect inspection, complementing the high resolution inspection capabilities of the TeraScanHR defect inspection system. WPI is accomplished by using the high resolution mask images to construct a physical mask model (D. Pettibone et al 1999). This mask model is then used to create the mask image in the wafer aerial plane. A threshold model is applied to enhance the inspectability of printing defects. WPI can eliminate the mask restrictions imposed on OPC solutions by inspection tool limitations in the past. Historically, minimum image restrictions were required to avoid nuisance inspection stops and/or subsequent loss of sensitivity to defects. WPI has the potential to eliminate these limitations by moving the mask defect inspections to the wafer plane. This paper outlines Wafer Plane Inspection technology, and explores the application of this technology to advanced reticle inspection. A total of twelve representative critical layers were inspected using WPI die-to-die mode. The results from scanning these advanced reticles have shown that applying WPI with a pixel size of 90nm (WPI P90) captures all the defects of interest (DOI) with low false defect detection rates. In validating CD predictions, the delta CDs from WPI are compared against Aerial Imaging Measurement System (AIMS), where a good correlation is established between WPI and AIMS^TM.

Citation Download Citation

Rajesh Nagpal, Firoz Ghadiali, Jun Kim, Tracy Huang, and Song Pang "Wafer plane inspection for advanced reticle defects", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70281H (19 May 2008); https://doi.org/10.1117/12.793058

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