Floating zone growth of Ni-doped MgGa2O4 single crystal for near-infrared tunable laser

Takenobu Suzuki; Yusuke Arai; Yasutake Ohishi

doi:10.1117/12.794141

25 August 2008 Floating zone growth of Ni-doped MgGa₂O₄ single crystal for near-infrared tunable laser

Takenobu Suzuki, Yusuke Arai, Yasutake Ohishi

Proceedings Volume 7056, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications II; 70561B (2008) https://doi.org/10.1117/12.794141
Event: Photonic Devices + Applications, 2008, San Diego, California, United States

Abstract

Crystal growth and spectroscopic characterization of Ni-doped MgGa₂O₄ belonging to inverse-spinel structure crystal family are described. Single crystals of this material were grown by floating zone method for the first time. Oxygen gas flow was essential to minimize evaporation of Ga₂O₃ during the floating zone crystal growth process. Bubble and inclusion-free crystals were obtained for the growth rate less than 5 mm/hour. Ni:MgGa₂O₄ single crystal was characterized by broadband fluorescence in 1100-1600 nm wavelength range and 1.6 msec room-temperature lifetime. It could be attributed to the transition of ³T₂(³F)→³A(²F) transition of the octahedrally coordinated Ni²⁺. The internal quantum efficiency of the near-infrared fluorescence was about 82 % for 1 mol% Ni-doped MgGa₂O₄ single crystal at room temperature. The new material is to be very promising for tunable laser applications covering the important optical communication, eye safe, 1100-1600 nm wavelength.

Citation Download Citation

Takenobu Suzuki, Yusuke Arai, and Yasutake Ohishi "Floating zone growth of Ni-doped MgGa₂O₄ single crystal for near-infrared tunable laser", Proc. SPIE 7056, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications II, 70561B (25 August 2008); https://doi.org/10.1117/12.794141

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